The Market Reports

Synopsis
The global market for GaN and SiC Power Semiconductor was estimated to be worth US$ 5279 million in 2024 and is forecast to a readjusted size of US$ 21056 million by 2031 with a CAGR of 21.0% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on GaN and SiC Power Semiconductor cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
This report studies the GaN Power Devices and SiC Power Devices.
In terms of market size, currently, GaN power devices are about one-tenth of SiC power devices.
Gallium nitride (GaN) is used as the wide band gap material for next generation power semiconductors and high frequency devices.
SiC (silicon carbide) is a compound semiconductor composed of silicon and carbide. SiC provides a number of advantages over silicon, including 10x the breakdown electric field strength, 3x the band gap, and enabling a wider range of p- and n-type control required for device construction.
Silicon Carbide (SiC) devices are widely used in automotive, EV charging, industrial motor/drive, PV, energy storage, wind power, UPS, data center & server and rail transport, etc.
In automotive, SiC power devices are mainly used in automotive main inverter, on-board chargers (OBC) and DC/DC converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.
SiC Power Devices are mainly used in Automotive Main Inverter, On-Board Chargers and DC/DC Converter. and the SiC power devices market was dominated by STMicroelectronics, Infineon, Wolfspeed, Rohm, Onsemi, BYD Semiconductor.
GaN power devices have grown rapidly in recent years, and a large number of companies have gradually entered the industry. GaN power devices are currently mainly used in consumer electronics, such as mobile phone fast charging, adapters, etc. In the automotive, the entry point of GaN power devices is the on-board charger (OBC). Currently, the GaN power devices are dominated by Innoscience, Infineon (GaN Systems), Power Integrations, Inc., Navitas Semiconductor, Efficient Power Conversion Corporation (EPC), and Renesas Electronics (Transphorm), among which Innoscience is the world's largest GaN power device manufacturer.
The global GaN Power Devices market size was US$ 406 million in 2024 and is forecast to a readjusted size of US$ 2,245 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
The global SiC Power Devices market size was US$ 4.87 billion in 2024 and is forecast to a readjusted size of US$ 18.8 billion by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
The North America GaN and SiC Power Semiconductor market size was US$ 1,039 million in 2024, while China was US$ 2,584 million. The proportion of the North America was 19.69% in 2024, while China percentage was 48.9%, and it is predicted that China share will reach 61.1% in 2031, trailing a CAGR of 24.53 % through the analysis period.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
The global key manufacturers of SiC Power Devices include onsemi, STMicroelectronics, Infineon, Wolfspeed, BYD Semiconductor, Bosch, United Nova Technology, Navitas (GeneSiC), Guangdong AccoPower Semiconductor, Rohm, San'an Optoelectronics, etc,. In 2024, the global top seven players occupied for a share approximately 85% in terms of revenue.
Automotive is the largest market, holds a share about 81% in 2024, it is prejected that Automotive will reach 83.6% in 2031.
In North America, in terms of sales volume, in 2024, the top five players hold a share about 76%, while in China, top five players hold a share nearly 62.9%.
This report aims to provide a comprehensive presentation of the global market for GaN and SiC Power Semiconductor, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of GaN and SiC Power Semiconductor by region & country, by Type, and by Application.
The GaN and SiC Power Semiconductor market size, estimations, and forecasts are provided in terms of sales volume (K Pcs) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN and SiC Power Semiconductor.
Market Segmentation
By Company
onsemi
STMicroelectronics
Infineon (GaN Systems)
Wolfspeed
BYD Semiconductor
Bosch
United Nova Technology
Innoscience
Navitas (GeneSiC)
Guangdong AccoPower Semiconductor
Rohm
San'an Optoelectronics
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Semikron Danfoss
Mitsubishi Electric
BASiC Semiconductor
Fuji Electric
SemiQ
PN Junction Semiconductor (Hangzhou)
Zhuzhou CRRC Times Electric
InventChip Technology
Microchip (Microsemi)
CETC 55
Toshiba
WeEn Semiconductors
Littelfuse (IXYS)
Renesas Electronics (Transphorm)
Yangzhou Yangjie Electronic Technology
Vishay Intertechnology
China Resources Microelectronics Limited
Nexperia
SK powertech
Texas Instruments
Alpha & Omega Semiconductor
SanRex
StarPower
Changzhou Galaxy Century Microelectronics
GE Aerospace
Hangzhou Silan Microelectronics
KEC
PANJIT Group
Diodes Incorporated
Cissoid
Segment by Type
SiC Power Devices
GaN Power Devices
Segment by Application
Automotive & Mobility
EV Charging
Consumer Electronics
Industrial Motor/Drive
PV, Energy Storage, Wind Power
UPS, Data Center & Server
Rail Transport
Defense & Aerospace
Others
By Region
North America
United States
Canada
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia-Pacific
Europe
Germany
France
U.K.
Italy
Netherlands
Nordic Countries
Rest of Europe
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of GaN and SiC Power Semiconductor manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of GaN and SiC Power Semiconductor in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of GaN and SiC Power Semiconductor in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.

Index