The Market Reports

Synopsis
The global market for GaN Power Devices was estimated to be worth US$ 403 million in 2024 and is forecast to a readjusted size of US$ 2257 million by 2031 with a CAGR of 25.6% during the forecast period 2025-2031.
Power GaN (Gallium Nitride) devices are used in high-efficiency power electronics, especially where compact, high-performance systems are needed. They are increasingly popular in applications that require high power density, fast switching speeds, and high efficiency, such as in electric vehicles (EVs), data centers, consumer electronics, and renewable energy systems.
The GaN Power Devices include GaN HEMT Discretes, GaN SiP, and SoC, etc.
The global key manufacturers of GaN Power Devices include Infineon (GaN Systems), Navitas (GeneSiC), Innoscience, Power Integrations, Inc., Renesas Electronics (Transphorm), Efficient Power Conversion Corporation (EPC), etc. In 2024, the global top five players occupied for a share approximately 88% in terms of revenue.
2025 is shaping up as an exciting year for GaN, we are still early in the GaN revolution with huge opportunities still ahead in the short, medium, and long term.
Short term, GaN has just begun to penetrate the power supply market, and adoption is accelerating across a wide range of low-power applications, including several mentioned above—metering, appliances, TVs, automotive and residential networking.
In the medium term, we believe that the opportunity for GaN at high power levels is massive, nowhere more so than in AI data centers. While data center operators are eager for innovative power solutions for AI, adoption of GaN has been inhibited by the challenges of using discrete GaN in high reliability systems.
Longer term, we believe GaN can achieve power levels sufficient for EV drivetrains at much lower cost than silicon carbide, the incumbent technology in many EVs.
This report aims to provide a comprehensive presentation of the global market for GaN Power Devices, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of GaN Power Devices by region & country, by Type, and by Application.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on GaN Power Devices cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
The GaN Power Devices market size, estimations, and forecasts are provided in terms of sales volume (K Pcs) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN Power Devices.
Market Segmentation
By Company
Innoscience
Navitas (GeneSiC)
Efficient Power Conversion Corporation (EPC)
Power Integrations, Inc.
Infineon (GaN Systems)
Renesas Electronics (Transphorm)
Texas Instruments
Rohm
STMicroelectronics
Nexperia
China Resources Microelectronics Limited
CorEnergy
Qingdao Cohenius Microelectronics
Hangzhou Silan Microelectronics
Runxin Microelectronics
GaNext
GaNPower
CloudSemi
Segment by Type
GaN Power >600V
GaN Power <200V
Segment by Application
Mobile and Consumer
Telecom and Infrastructure
Automotive and Mobility
Industrial
Defense & Aerospace
Others
By Region
North America
United States
Canada
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia-Pacific
Europe
Germany
France
U.K.
Italy
Netherlands
Nordic Countries
Rest of Europe
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of GaN Power Devices manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of GaN Power Devices in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of GaN Power Devices in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.

Index