The Market Reports

Synopsis
The global market for ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) was estimated to be worth US$ 268 million in 2024 and is forecast to a readjusted size of US$ 463 million by 2031 with a CAGR of 8.0% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) are detectors and arrays that are based on indium gallium arsenide (InGaAs). This report covers InGaAs Photodiodes, Line InGaAs Sensors, Area InGaAs Sensors
The primary materials used for manufacturing short-wave infrared detectors include HgCdTe, InGaAs, PbS, and PtSi. With the continuous improvement in the growth and chip fabrication processes for InGaAs, detectors made from this material have become the best choice for SWIR applications. They boast a quantum efficiency of approximately 70% to 90%, a high mobility of around 8000 cm²/(V·s) at room temperature, along with high sensitivity, fast response times, and cost-effectiveness.
​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) are widely used in various market sectors, including military, security monitoring, industrial applications, medical imaging, and scientific research. Major global manufacturers of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) include Hamamatsu Photonics, SCD, Lynred, Teledyne Technologies, and Sensors Unlimited. These leading companies are renowned in the industry for their outstanding product performance and customer satisfaction. However, market competition is intensifying, with more manufacturers entering the InGaAs SWIR detector space, including prominent domestic manufacturers in China such as Jiwu Optoelectronics, Guohui Optoelectronics, Zhongke Dexin, and Lideng Optoelectronics.
The main types of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) include single-element, linear array, and two-dimensional array detectors, with single-element ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) holding the largest market share in terms of sales.
The primary consumer regions for ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) are North America, Europe, and the Asia-Pacific region, with the Asia-Pacific region being the largest consumer, accounting for approximately 45% of global revenue in 2024.
Industry Driving Factors:
Rapid Development of Infrared Detectors: Short-wave infrared InGaAs focal plane detectors are a research hotspot both domestically and internationally. China’s major strategic initiatives for the next generation of aerospace remote sensing instruments require high-performance, large-scale, small-pixel short-wave infrared InGaAs focal plane detectors with high spatial resolution, energy resolution, and temporal resolution.
Increased Domestic Production: Foreign research on InGaAs infrared focal plane devices began earlier, and many manufacturers have developed mature product lines. Although domestic research started later, significant progress has been made in recent years, narrowing the gap with international competitors.
Continuous Development of the Military Electronics Industry: With ongoing technological advancements, the military electronics sector is continuously innovating and improving. This industry plays a crucial role in national security and defense construction, enhancing national defense capabilities and security assurance. Moreover, military electronics are a vital part of the country's high-tech industry, contributing positively to economic development and technological progress.
In summary, ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) are key components with significant applications across various industries, driven by advancements in technology and increasing domestic capabilities.
This report aims to provide a comprehensive presentation of the global market for ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors), focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) by region & country, by Type, and by Application.
The ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors).
Market Segmentation
By Company
Hamamatsu
SCD
Lynred
Chunghwa
Teledyne Technologies
Sensors Unlimited
Jiwu Optoelectronic
Sony
OSI Optoelectronics
GHOPTO
TE (First Sensor)
ZKDX
EXOSENS (XenICs)
Xi'an Leading Optoelectronic Technology
CETC (NO.44 Institute)
NORINCO GROUP (Kunming Institute of Physics)
Segment by Type
InGaAs Photodiodes
Line InGaAs Sensors
Area InGaAs Sensors
Segment by Application
Military
Surveillance
Induatrial
Medical
Scientific Research
Other Application
By Region
North America
United States
Canada
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia-Pacific
Europe
Germany
France
U.K.
Italy
Netherlands
Nordic Countries
Rest of Europe
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of ​Indium Gallium Arsenide Sensors​ (InGaAs Sensors) in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.

Index