The Market Reports

Synopsis
The global market for SGT MOSFET was estimated to be worth US$ 2093 million in 2024 and is forecast to a readjusted size of US$ 3552 million by 2031 with a CAGR of 8.0% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SGT MOSFET cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Shielded Gate Trench MOSFET (SGT-MOSFET) is an improved trench power MOSFET based on the traditional trench MOSFET (U-MOSFET). Based on the charge balance technology theory, it adds an additional polysilicon field plate to the traditional power MOSFET for electric field modulation to improve the device structure of withstand voltage and reduce on-resistance. It has the characteristics of low on-resistance, low switching loss, and good frequency characteristics. Its shielded gate plays the role of an internal field plate in the drift region, which makes SGT have significant advantages in terms of specific on-resistance R_(ON(SP)) and quality factor (FOM=Ron*Qg), which can effectively improve the energy efficiency of the system.
Global key players of SGT MOSFET include Infineon, ON Semiconductor, China Resources Microelectronics Limited, etc. The top three players hold a share over 60%. China is the largest market, with a share about 44%, followed by Europe and North America, with share 20% and 17%, separately. In terms of product type, ≤100V is the largest segment, occupied for a share of 54%. In terms of application, Consumer Electronics is the largest one, with a share about 45 percent.
Analysis of SGT MOSFET market drivers
Technology upgrade and performance advantages
SGT MOSFET (shielded gate trench power MOSFET) significantly reduces on-resistance (Rsp) and switching loss (Qg) by optimizing trench depth and shielded gate structure, while improving energy density and chip integration. Compared with traditional trench MOSFET, its chip area can be reduced by 40%, on-resistance can be reduced by more than 50%, and high-frequency characteristics are better. These technical advantages make it irreplaceable in high-frequency, high-efficiency, and high-power density scenarios (such as automotive electronics and consumer electronics).
Demand explosion in emerging application fields
Automotive electronics: Electric vehicles have a surge in demand for high-voltage/high-current power devices, and SGT MOSFET is widely used in scenarios such as on-board charging, motor drive, and battery management system (BMS).
Consumer electronics: The demand for low-power and miniaturized devices in terminals such as fast charging adapters and TWS headphones has driven the penetration rate of SGT MOSFET in the low-voltage field (≤100V).
Industry and energy storage: The growing demand for efficient power conversion in fields such as photovoltaic inverters and industrial motor control has further driven the demand for SGT MOSFET.
Domestic substitution and cost optimization
Domestic manufacturers (such as Huarun Microelectronics, Silan Microelectronics, and Xinjie Energy) gradually replace imported products through technological breakthroughs and capacity expansion.
Domestic SGT MOSFET has achieved a localization rate of more than 80% in the low-end market such as electric bicycle controllers with its high cost performance (such as Xinjie Energy's third-generation product on-resistance is reduced by more than 20%) and rapid response capabilities.
Policy support and industrial chain coordination
Governments of various countries promote the autonomy of the semiconductor industry (such as China's "14th Five-Year Plan" and the EU Chip Act), and provide funds and tax incentives for SGT MOSFET.
Domestic manufacturers achieve vertical integration from design to manufacturing through the IDM model (such as Huarun Microelectronics) or cooperation with wafer fabs (such as Jiejie Microelectronics and SMIC), shorten the R&D cycle and reduce costs.
Supply chain reconstruction and chip shortage catalysis
Overseas giants (such as Infineon and ON Semiconductor) transfer part of their orders to domestic foundries, indirectly promoting the upgrading of local SGT MOSFET processes (such as Xinjie Energy's third-generation products achieve double-sided heat dissipation packaging).
The growth of the SGT MOSFET market is driven by technology upgrades, emerging application demands, accelerated domestic substitution, policy support, and supply chain reconstruction. In the future, as automotive electronics and industrial automation continue to advance, SGT MOSFET will form differentiated competition with GaN in the medium and low voltage fields.
This report aims to provide a comprehensive presentation of the global market for SGT MOSFET, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SGT MOSFET by region & country, by Type, and by Application.
The SGT MOSFET market size, estimations, and forecasts are provided in terms of sales volume (Million Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SGT MOSFET.
Market Segmentation
By Company
Infineon
ON Semiconductor
China Resources Microelectronics Limited
AOS
Wuxi NCE Power Co.,Ltd.
JieJie Microelectronics
Silan Microelectronics
Yangjie Electronic Technology
Hunteck
Oriental Semiconductor
Segment by Type
≤100V
＞100V
Segment by Application
Automotive Electronics
Consumer Electronics
Industrial Electronics
By Region
North America
United States
Canada
Asia-Pacific
China
Japan
South Korea
Southeast Asia
India
Australia
Rest of Asia-Pacific
Europe
Germany
France
U.K.
Italy
Netherlands
Nordic Countries
Rest of Europe
Latin America
Mexico
Brazil
Rest of Latin America
Middle East & Africa
Turkey
Saudi Arabia
UAE
Rest of MEA
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SGT MOSFET manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SGT MOSFET in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SGT MOSFET in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.

Index